Al(2)O(3)-Based a-IGZO Schottky Diodes for Temperature Sensing

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al(2)O(3) based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, an...

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Detalles Bibliográficos
Autores principales: Guo, Qianqian, Lu, Fei, Tan, Qiulin, Zhou, Tianhao, Xiong, Jijun, Zhang, Wendong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6359250/
https://www.ncbi.nlm.nih.gov/pubmed/30634474
http://dx.doi.org/10.3390/s19020224

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6359250/
https://www.ncbi.nlm.nih.gov/pubmed/30634474
http://dx.doi.org/10.3390/s19020224

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