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Al(2)O(3)-Based a-IGZO Schottky Diodes for Temperature Sensing
High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al(2)O(3) based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, an...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6359250/ https://www.ncbi.nlm.nih.gov/pubmed/30634474 http://dx.doi.org/10.3390/s19020224 |