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Atomic structures of self-assembled epitaxially grown GdSi(2) nanowires on Si(001) by STM
Self-assembled rare-earth (RE) silicide nanowires (NWs) on semiconductor surfaces are considered as good candidates for creating and investigating one-dimensional electron systems because of their exceptionally anisotropic growth behavior and metallic property. While detailed atomic structures are e...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6362016/ https://www.ncbi.nlm.nih.gov/pubmed/30718763 http://dx.doi.org/10.1038/s41598-018-37015-6 |