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Atomic structures of self-assembled epitaxially grown GdSi(2) nanowires on Si(001) by STM

Self-assembled rare-earth (RE) silicide nanowires (NWs) on semiconductor surfaces are considered as good candidates for creating and investigating one-dimensional electron systems because of their exceptionally anisotropic growth behavior and metallic property. While detailed atomic structures are e...

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Detalles Bibliográficos
Autores principales:	Song, Sun Kyu, Kim, Tae-Hwan, Yeom, Han Woong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6362016/ https://www.ncbi.nlm.nih.gov/pubmed/30718763 http://dx.doi.org/10.1038/s41598-018-37015-6

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