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CdSe/ZnS quantum dot encapsulated MoS(2) phototransistor for enhanced radiation hardness
Notable progress achieved in studying MoS(2) based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS(2) phototransistors in harsh environments is highly required. Here, we investigate effects of gamma...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6363733/ https://www.ncbi.nlm.nih.gov/pubmed/30723221 http://dx.doi.org/10.1038/s41598-018-37902-y |