Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Epitaxial growth of atomically thin two-dimensional crystals such as transition metal dichalcogenides remains challenging, especially for producing large-size transition metal dichalcogenides bilayer crystals featuring high density of states, carrier mobility and stability at room temperature. Here...

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Detalles Bibliográficos
Autores principales: Zhang, Xiumei, Nan, Haiyan, Xiao, Shaoqing, Wan, Xi, Gu, Xiaofeng, Du, Aijun, Ni, Zhenhua, Ostrikov, Kostya (Ken)
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6363754/
https://www.ncbi.nlm.nih.gov/pubmed/30723204
http://dx.doi.org/10.1038/s41467-019-08468-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6363754/
https://www.ncbi.nlm.nih.gov/pubmed/30723204
http://dx.doi.org/10.1038/s41467-019-08468-8

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