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Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentation
Thin Ge films directly grown on Si substrate using two-step low temperature growth technique are subjected to low load nano-indentation at room temperature. The nano-indentation is carried out using a Berkovich diamond tip (R ~ 20 nm). The residual impressions are studied using ex-situ Raman Micro-S...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6367472/ https://www.ncbi.nlm.nih.gov/pubmed/30733519 http://dx.doi.org/10.1038/s41598-018-38440-3 |