Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of traditiona...

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Detalles Bibliográficos
Autores principales: He, Zhen-Yu, Wang, Tian-Yu, Chen, Lin, Zhu, Hao, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6367491/
https://www.ncbi.nlm.nih.gov/pubmed/30734146
http://dx.doi.org/10.1186/s11671-019-2875-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6367491/
https://www.ncbi.nlm.nih.gov/pubmed/30734146
http://dx.doi.org/10.1186/s11671-019-2875-4

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