Cargando…
Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications
With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of traditiona...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6367491/ https://www.ncbi.nlm.nih.gov/pubmed/30734146 http://dx.doi.org/10.1186/s11671-019-2875-4 |