Dielectric Enhancement of Atomic Layer-Deposited Al(2)O(3)/ZrO(2)/Al(2)O(3) MIM Capacitors by Microwave Annealing

For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the diele...

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Detalles Bibliográficos
Autores principales: Zhu, Bao, Wu, Xiaohan, Liu, Wen-Jun, Ding, Shi-Jin, Zhang, David Wei, Fan, Zhongyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6370895/
https://www.ncbi.nlm.nih.gov/pubmed/30742246
http://dx.doi.org/10.1186/s11671-019-2874-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6370895/
https://www.ncbi.nlm.nih.gov/pubmed/30742246
http://dx.doi.org/10.1186/s11671-019-2874-5

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