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Dielectric Enhancement of Atomic Layer-Deposited Al(2)O(3)/ZrO(2)/Al(2)O(3) MIM Capacitors by Microwave Annealing
For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the diele...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6370895/ https://www.ncbi.nlm.nih.gov/pubmed/30742246 http://dx.doi.org/10.1186/s11671-019-2874-5 |