Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO(2) Using Carbon Dioxide

In this work, we report the successful growth of high-quality SiO(2) films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO(2) films were grown at 90 °C using CO(2) and Bis(tertiary-butylamino)silane as...

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Detalles Bibliográficos
Autores principales: Zhu, Zhen, Sippola, Perttu, Ylivaara, Oili M. E., Modanese, Chiara, Di Sabatino, Marisa, Mizohata, Kenichiro, Merdes, Saoussen, Lipsanen, Harri, Savin, Hele
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6372707/
https://www.ncbi.nlm.nih.gov/pubmed/30747362
http://dx.doi.org/10.1186/s11671-019-2889-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6372707/
https://www.ncbi.nlm.nih.gov/pubmed/30747362
http://dx.doi.org/10.1186/s11671-019-2889-y

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