Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl(4)) and methane (CH(4)) as precursors. The effects of deposition temperature (T(dep)) and total pressure (P(tot)) on the orientation and surficial morphology w...

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Detalles Bibliográficos
Autores principales: Hu, Zhiying, Zheng, Dingheng, Tu, Rong, Yang, Meijun, Li, Qizhong, Han, Mingxu, Zhang, Song, Zhang, Lianmeng, Goto, Takashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384857/
https://www.ncbi.nlm.nih.gov/pubmed/30691185
http://dx.doi.org/10.3390/ma12030390

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384857/
https://www.ncbi.nlm.nih.gov/pubmed/30691185
http://dx.doi.org/10.3390/ma12030390

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