Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface

Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 h at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state inte...

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Detalles Bibliográficos
Autores principales: Zhao, Yangyang, Li, Jiuyong, Qiu, Ranfeng, Shi, Hongxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384985/
https://www.ncbi.nlm.nih.gov/pubmed/30720709
http://dx.doi.org/10.3390/ma12030472
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author Zhao, Yangyang
Li, Jiuyong
Qiu, Ranfeng
Shi, Hongxin
author_facet Zhao, Yangyang
Li, Jiuyong
Qiu, Ranfeng
Shi, Hongxin
author_sort Zhao, Yangyang
collection PubMed
description Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 h at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state interface was investigated. Only TiAl(3) phase was detected in the interfacial zone, and its growth was governed by reaction-controlled mechanism in the previous period and by diffusion-controlled mechanism in the latter period. The activation energies were 198,019 and 122,770 J/mol for reaction-controlled and diffusion-controlled mechanism, respectively.
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spelling pubmed-63849852019-02-23 Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface Zhao, Yangyang Li, Jiuyong Qiu, Ranfeng Shi, Hongxin Materials (Basel) Article Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 h at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state interface was investigated. Only TiAl(3) phase was detected in the interfacial zone, and its growth was governed by reaction-controlled mechanism in the previous period and by diffusion-controlled mechanism in the latter period. The activation energies were 198,019 and 122,770 J/mol for reaction-controlled and diffusion-controlled mechanism, respectively. MDPI 2019-02-04 /pmc/articles/PMC6384985/ /pubmed/30720709 http://dx.doi.org/10.3390/ma12030472 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhao, Yangyang
Li, Jiuyong
Qiu, Ranfeng
Shi, Hongxin
Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title_full Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title_fullStr Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title_full_unstemmed Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title_short Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
title_sort growth characterization of intermetallic compound at the ti/al solid state interface
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384985/
https://www.ncbi.nlm.nih.gov/pubmed/30720709
http://dx.doi.org/10.3390/ma12030472
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AT lijiuyong growthcharacterizationofintermetalliccompoundatthetialsolidstateinterface
AT qiuranfeng growthcharacterizationofintermetalliccompoundatthetialsolidstateinterface
AT shihongxin growthcharacterizationofintermetalliccompoundatthetialsolidstateinterface

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