Cargando…
Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly compos...
Autores principales: | Lee, Jaewoo, Im, Jong-Pil, Kim, Jeong-Hun, Lim, Sol-Yee, Moon, Seung-Eon |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6387240/ https://www.ncbi.nlm.nih.gov/pubmed/30691010 http://dx.doi.org/10.3390/s19030488 |
Ejemplares similares
-
Wafer-Level Self-Packaging Design and Fabrication of MEMS Capacitive Pressure Sensors
por: Wan, Yuanjie, et al.
Publicado: (2022) -
On Frequency-Based Interface Circuits for Capacitive MEMS Accelerometers
por: Qiao, Zhiliang, et al.
Publicado: (2018) -
A Wafer Level Vacuum Encapsulated Capacitive Accelerometer Fabricated in an Unmodified Commercial MEMS Process
por: Merdassi, Adel, et al.
Publicado: (2015) -
A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process
por: Rao, Kang, et al.
Publicado: (2019) -
A Novel Fabrication Method for a Capacitive MEMS Accelerometer Based on Glass–Silicon Composite Wafers
por: He, Yurong, et al.
Publicado: (2021)