Memristive characteristic of an amorphous Ga-Sn-O thin-film device

We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that the hysteresis loop of the flowing current (I)...

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Detalles Bibliográficos
Autores principales: Sugisaki, Sumio, Matsuda, Tokiyoshi, Uenuma, Mutsunori, Nabatame, Toshihide, Nakashima, Yasuhiko, Imai, Takahito, Magari, Yusaku, Koretomo, Daichi, Furuta, Mamoru, Kimura, Mutsumi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391444/
https://www.ncbi.nlm.nih.gov/pubmed/30808898
http://dx.doi.org/10.1038/s41598-019-39549-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391444/
https://www.ncbi.nlm.nih.gov/pubmed/30808898
http://dx.doi.org/10.1038/s41598-019-39549-9

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