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Memristive characteristic of an amorphous Ga-Sn-O thin-film device
We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that the hysteresis loop of the flowing current (I)...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391444/ https://www.ncbi.nlm.nih.gov/pubmed/30808898 http://dx.doi.org/10.1038/s41598-019-39549-9 |