Cargando…
Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization
The growth of the poly-Si films was studied by Transmission Electron Microscopy (TEM) after Ni Metal Induced Lateral Crystallization (Ni-MILC) of amorphous Si films at 413 °C. Significant differences in the morphology and the mode of growth of the films were observed, in comparison to films grown at...
Autores principales: | Vouroutzis, N., Stoemenos, J., Frangis, N., Radnóczi, G. Z., Knez, D., Hofer, F., Pécz, B. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391529/ https://www.ncbi.nlm.nih.gov/pubmed/30808923 http://dx.doi.org/10.1038/s41598-019-39503-9 |
Ejemplares similares
-
Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization
por: Pécz, Béla, et al.
Publicado: (2021) -
Perspectives on metal induced crystallization of a-Si and a-Ge thin films
por: Maity, G., et al.
Publicado: (2022) -
The Effect of Stretching on the Crystal Structure and Crystal Orientation of PA510/SiO(2) Films
por: Cui, Lingna, et al.
Publicado: (2021) -
Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth
por: Lee, Lynn, et al.
Publicado: (2017) -
Growth and Crystallization of SiO(2)/GeO(2) Thin Films on Si(100) Substrates
por: Antoja-Lleonart, Jordi, et al.
Publicado: (2021)