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Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth
In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p–n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector....
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6397187/ https://www.ncbi.nlm.nih.gov/pubmed/30824803 http://dx.doi.org/10.1038/s41598-019-40095-7 |