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Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth
In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p–n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector....
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6397187/ https://www.ncbi.nlm.nih.gov/pubmed/30824803 http://dx.doi.org/10.1038/s41598-019-40095-7 |
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author | Lee, Ming-Lun Wang, Shih-Sian Yeh, Yu-Hsiang Liao, Po-Hsun Sheu, Jinn-Kong |
author_facet | Lee, Ming-Lun Wang, Shih-Sian Yeh, Yu-Hsiang Liao, Po-Hsun Sheu, Jinn-Kong |
author_sort | Lee, Ming-Lun |
collection | PubMed |
description | In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p–n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector. The LEDs that showed efficient hole injection and current spreading were configured to form a p-type GaN layer between the MQW and regrown n-type GaN top layer. These LEDs exhibited higher luminous efficiency and lower operation voltage than the LEDs with regrown p-type GaN top layers. The LEDs with n-type GaN top layers emitted single-peak spectra at approximately 450 nm under a forward bias. The UV peak at 365 nm (i.e., the GaN band-edge emission) was absent because the regrown surface GaN p–n junctions behaved as carrier injectors rather than photon injectors. In other words, the single-peak blue emission was not generated by the optical pumping of UV light emitted from the surface p–n GaN homojunction. |
format | Online Article Text |
id | pubmed-6397187 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-63971872019-03-05 Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth Lee, Ming-Lun Wang, Shih-Sian Yeh, Yu-Hsiang Liao, Po-Hsun Sheu, Jinn-Kong Sci Rep Article In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p–n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector. The LEDs that showed efficient hole injection and current spreading were configured to form a p-type GaN layer between the MQW and regrown n-type GaN top layer. These LEDs exhibited higher luminous efficiency and lower operation voltage than the LEDs with regrown p-type GaN top layers. The LEDs with n-type GaN top layers emitted single-peak spectra at approximately 450 nm under a forward bias. The UV peak at 365 nm (i.e., the GaN band-edge emission) was absent because the regrown surface GaN p–n junctions behaved as carrier injectors rather than photon injectors. In other words, the single-peak blue emission was not generated by the optical pumping of UV light emitted from the surface p–n GaN homojunction. Nature Publishing Group UK 2019-03-01 /pmc/articles/PMC6397187/ /pubmed/30824803 http://dx.doi.org/10.1038/s41598-019-40095-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Lee, Ming-Lun Wang, Shih-Sian Yeh, Yu-Hsiang Liao, Po-Hsun Sheu, Jinn-Kong Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title | Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title_full | Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title_fullStr | Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title_full_unstemmed | Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title_short | Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
title_sort | light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6397187/ https://www.ncbi.nlm.nih.gov/pubmed/30824803 http://dx.doi.org/10.1038/s41598-019-40095-7 |
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