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Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
8-band k · p Hamiltonian together with envelope function approximation and planewave expansion method are applied to calculate the electronic band structure and material gain for Ge(1−w)Sn(w)/Si(y)Ge(1−x−y)Sn(x)/Ge(1−w)Sn(w) quantum wells (QWs) grown on virtual Ge(1-z)Sn(z) substrates integrated wit...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6397312/ https://www.ncbi.nlm.nih.gov/pubmed/30824800 http://dx.doi.org/10.1038/s41598-019-40146-z |