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Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

8-band k · p Hamiltonian together with envelope function approximation and planewave expansion method are applied to calculate the electronic band structure and material gain for Ge(1−w)Sn(w)/Si(y)Ge(1−x−y)Sn(x)/Ge(1−w)Sn(w) quantum wells (QWs) grown on virtual Ge(1-z)Sn(z) substrates integrated wit...

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Detalles Bibliográficos
Autores principales: Mączko, Herbert S., Kudrawiec, Robert, Gladysiewicz, Marta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6397312/
https://www.ncbi.nlm.nih.gov/pubmed/30824800
http://dx.doi.org/10.1038/s41598-019-40146-z