Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,Mn)As compounds, epitaxially grown under either compressive or tensile strain, have been characterized from a perspective of structural and magnetization homogeneity. The quality and composition of th...

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Detalles Bibliográficos
Autores principales: Levchenko, K., Prokscha, T., Sadowski, J., Radelytskyi, I., Jakiela, R., Trzyna, M., Andrearczyk, T., Figielski, T., Wosinski, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399229/
https://www.ncbi.nlm.nih.gov/pubmed/30833684
http://dx.doi.org/10.1038/s41598-019-40309-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399229/
https://www.ncbi.nlm.nih.gov/pubmed/30833684
http://dx.doi.org/10.1038/s41598-019-40309-y

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