Self-assembled Bismuth Selenide (Bi(2)Se(3)) quantum dots grown by molecular beam epitaxy

We report the growth of self-assembled Bi(2)Se(3) quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microsco...

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Detalles Bibliográficos
Autores principales: Claro, Marcel S., Levy, Ido, Gangopadhyay, Abhinandan, Smith, David J., Tamargo, Maria C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399346/
https://www.ncbi.nlm.nih.gov/pubmed/30833604
http://dx.doi.org/10.1038/s41598-019-39821-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399346/
https://www.ncbi.nlm.nih.gov/pubmed/30833604
http://dx.doi.org/10.1038/s41598-019-39821-y

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