Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)(2) as a Metal Precursor

For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are grown by plasma-enhanced atomic layer deposition using Co(EtCp)(2) as a precursor, and the...

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Detalles Bibliográficos
Autores principales: Zhu, Bao, Ding, Zi-Jun, Wu, Xiaohan, Liu, Wen-Jun, Zhang, David Wei, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399372/
https://www.ncbi.nlm.nih.gov/pubmed/30830476
http://dx.doi.org/10.1186/s11671-019-2913-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399372/
https://www.ncbi.nlm.nih.gov/pubmed/30830476
http://dx.doi.org/10.1186/s11671-019-2913-2

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