Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)(2) as a Metal Precursor

For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are grown by plasma-enhanced atomic layer deposition using Co(EtCp)(2) as a precursor, and the influences of process parameters on the characteristics of the Co films are elaborately investigated. The results indicate that the process window is 125–225 °C with a growth rate of ~ 0.073 Å/cycle. That is to say, the connection of Et group to Cp ligand can enable a stable film growth at 125 °C, while the corresponding temperature must be higher than 200 °C in terms of Co(Cp)(2) and Co(MeCp)(2). The deposited films contain N and O elements besides dominant Co and C. Furthermore, the prolongation of the NH(3) pulse time significantly enhances the conductivity of the Co film and a low resistivity of 117 μΩ cm can be achieved with a NH(3) pulse time of 40 s. The root mean square roughness shows a smaller variation with the deposition temperature and maintains a low value of ~ 0.3 nm, indicative of a flat Co film.