Investigation of direct inkjet-printed versus spin-coated ZrO(2) for sputter IGZO thin film transistor

In this work, a low leakage current ZrO(2) was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO(2) were prepared to investigate the film formation process and electrical performance for dif...

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Detalles Bibliográficos
Autores principales: Cai, Wei, Ning, Honglong, Zhu, Zhennan, Wei, Jinglin, Zhou, Shangxiong, Yao, Rihui, Fang, Zhiqiang, Huang, Xiuqi, Lu, Xubing, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401082/
https://www.ncbi.nlm.nih.gov/pubmed/30838466
http://dx.doi.org/10.1186/s11671-019-2905-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401082/
https://www.ncbi.nlm.nih.gov/pubmed/30838466
http://dx.doi.org/10.1186/s11671-019-2905-2

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