Vacancy cluster in ZnO films grown by pulsed laser deposition

Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant V(Zn)-related defect in the as-grown undoped ZnO grown with relative low oxygen pressure P(O(2))...

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Detalles Bibliográficos
Autores principales: Wang, Zilan, Luo, Caiqin, Anwand, W., Wagner, A., Butterling, M., Rahman, M. Azizar, Phillips, Matthew R., Ton-That, Cuong, Younas, M., Su, Shichen, Ling, Francis Chi-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401145/
https://www.ncbi.nlm.nih.gov/pubmed/30837565
http://dx.doi.org/10.1038/s41598-019-40029-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401145/
https://www.ncbi.nlm.nih.gov/pubmed/30837565
http://dx.doi.org/10.1038/s41598-019-40029-3

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