Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects. This has led to the publication of countless different models to account for these effects, including s...

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Detalles Bibliográficos
Autores principales: Nicholls, Jordan, Dimitrijev, Sima, Tanner, Philip, Han, Jisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6403215/
https://www.ncbi.nlm.nih.gov/pubmed/30842531
http://dx.doi.org/10.1038/s41598-019-40287-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6403215/
https://www.ncbi.nlm.nih.gov/pubmed/30842531
http://dx.doi.org/10.1038/s41598-019-40287-1

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