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A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism
The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem of the Power Consumption (P(C)) can not be effecively deceased guided by the Moore’s Law as before. The GFET has the problem of the device can not be effectively turned off, since the band-gap of the gr...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6403360/ https://www.ncbi.nlm.nih.gov/pubmed/30842466 http://dx.doi.org/10.1038/s41598-019-40104-9 |