Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism

In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfac...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Wu, Wan-Yu, Ou, Sin-Liang, Chen, Song-Yan, Huang, Wei, Zhu, Wen-Zhang, Xiong, Fei-Bing, Zhang, Sam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/
https://www.ncbi.nlm.nih.gov/pubmed/30847661
http://dx.doi.org/10.1186/s11671-019-2915-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/
https://www.ncbi.nlm.nih.gov/pubmed/30847661
http://dx.doi.org/10.1186/s11671-019-2915-0

Ejemplares similares