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Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism

In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfac...

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Autores principales: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Wu, Wan-Yu, Ou, Sin-Liang, Chen, Song-Yan, Huang, Wei, Zhu, Wen-Zhang, Xiong, Fei-Bing, Zhang, Sam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/
https://www.ncbi.nlm.nih.gov/pubmed/30847661
http://dx.doi.org/10.1186/s11671-019-2915-0
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author Zhang, Xiao-Ying
Hsu, Chia-Hsun
Lien, Shui-Yang
Wu, Wan-Yu
Ou, Sin-Liang
Chen, Song-Yan
Huang, Wei
Zhu, Wen-Zhang
Xiong, Fei-Bing
Zhang, Sam
author_facet Zhang, Xiao-Ying
Hsu, Chia-Hsun
Lien, Shui-Yang
Wu, Wan-Yu
Ou, Sin-Liang
Chen, Song-Yan
Huang, Wei
Zhu, Wen-Zhang
Xiong, Fei-Bing
Zhang, Sam
author_sort Zhang, Xiao-Ying
collection PubMed
description In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfaces is investigated. The crystallization of the HfO(2) films and HfO(2)/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO(2) to Si interface. For annealing temperature below 400 °C, the HfO(2) film and interfacial layer are amorphous, and the latter consists of HfO(2) and silicon dioxide (SiO(2)). At annealing temperature of 450-550 °C, the HfO(2) film become multiphase polycrystalline, and a crystalline SiO(2) is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO(2) film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO(2).
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spelling pubmed-64057922019-03-27 Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism Zhang, Xiao-Ying Hsu, Chia-Hsun Lien, Shui-Yang Wu, Wan-Yu Ou, Sin-Liang Chen, Song-Yan Huang, Wei Zhu, Wen-Zhang Xiong, Fei-Bing Zhang, Sam Nanoscale Res Lett Nano Express In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfaces is investigated. The crystallization of the HfO(2) films and HfO(2)/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO(2) to Si interface. For annealing temperature below 400 °C, the HfO(2) film and interfacial layer are amorphous, and the latter consists of HfO(2) and silicon dioxide (SiO(2)). At annealing temperature of 450-550 °C, the HfO(2) film become multiphase polycrystalline, and a crystalline SiO(2) is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO(2) film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO(2). Springer US 2019-03-07 /pmc/articles/PMC6405792/ /pubmed/30847661 http://dx.doi.org/10.1186/s11671-019-2915-0 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Zhang, Xiao-Ying
Hsu, Chia-Hsun
Lien, Shui-Yang
Wu, Wan-Yu
Ou, Sin-Liang
Chen, Song-Yan
Huang, Wei
Zhu, Wen-Zhang
Xiong, Fei-Bing
Zhang, Sam
Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title_full Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title_fullStr Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title_full_unstemmed Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title_short Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
title_sort temperature-dependent hfo(2)/si interface structural evolution and its mechanism
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/
https://www.ncbi.nlm.nih.gov/pubmed/30847661
http://dx.doi.org/10.1186/s11671-019-2915-0
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