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Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfac...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/ https://www.ncbi.nlm.nih.gov/pubmed/30847661 http://dx.doi.org/10.1186/s11671-019-2915-0 |
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author | Zhang, Xiao-Ying Hsu, Chia-Hsun Lien, Shui-Yang Wu, Wan-Yu Ou, Sin-Liang Chen, Song-Yan Huang, Wei Zhu, Wen-Zhang Xiong, Fei-Bing Zhang, Sam |
author_facet | Zhang, Xiao-Ying Hsu, Chia-Hsun Lien, Shui-Yang Wu, Wan-Yu Ou, Sin-Liang Chen, Song-Yan Huang, Wei Zhu, Wen-Zhang Xiong, Fei-Bing Zhang, Sam |
author_sort | Zhang, Xiao-Ying |
collection | PubMed |
description | In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfaces is investigated. The crystallization of the HfO(2) films and HfO(2)/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO(2) to Si interface. For annealing temperature below 400 °C, the HfO(2) film and interfacial layer are amorphous, and the latter consists of HfO(2) and silicon dioxide (SiO(2)). At annealing temperature of 450-550 °C, the HfO(2) film become multiphase polycrystalline, and a crystalline SiO(2) is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO(2) film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO(2). |
format | Online Article Text |
id | pubmed-6405792 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-64057922019-03-27 Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism Zhang, Xiao-Ying Hsu, Chia-Hsun Lien, Shui-Yang Wu, Wan-Yu Ou, Sin-Liang Chen, Song-Yan Huang, Wei Zhu, Wen-Zhang Xiong, Fei-Bing Zhang, Sam Nanoscale Res Lett Nano Express In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfaces is investigated. The crystallization of the HfO(2) films and HfO(2)/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO(2) to Si interface. For annealing temperature below 400 °C, the HfO(2) film and interfacial layer are amorphous, and the latter consists of HfO(2) and silicon dioxide (SiO(2)). At annealing temperature of 450-550 °C, the HfO(2) film become multiphase polycrystalline, and a crystalline SiO(2) is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO(2) film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO(2). Springer US 2019-03-07 /pmc/articles/PMC6405792/ /pubmed/30847661 http://dx.doi.org/10.1186/s11671-019-2915-0 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Zhang, Xiao-Ying Hsu, Chia-Hsun Lien, Shui-Yang Wu, Wan-Yu Ou, Sin-Liang Chen, Song-Yan Huang, Wei Zhu, Wen-Zhang Xiong, Fei-Bing Zhang, Sam Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title | Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title_full | Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title_fullStr | Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title_full_unstemmed | Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title_short | Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism |
title_sort | temperature-dependent hfo(2)/si interface structural evolution and its mechanism |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/ https://www.ncbi.nlm.nih.gov/pubmed/30847661 http://dx.doi.org/10.1186/s11671-019-2915-0 |
work_keys_str_mv | AT zhangxiaoying temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT hsuchiahsun temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT lienshuiyang temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT wuwanyu temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT ousinliang temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT chensongyan temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT huangwei temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT zhuwenzhang temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT xiongfeibing temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism AT zhangsam temperaturedependenthfo2siinterfacestructuralevolutionanditsmechanism |