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Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism

In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfac...

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Detalles Bibliográficos
Autores principales:	Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Wu, Wan-Yu, Ou, Sin-Liang, Chen, Song-Yan, Huang, Wei, Zhu, Wen-Zhang, Xiong, Fei-Bing, Zhang, Sam
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2019
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405792/ https://www.ncbi.nlm.nih.gov/pubmed/30847661 http://dx.doi.org/10.1186/s11671-019-2915-0

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