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Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
Two-dimensional (2-D) materials such as MoS(2) and phosphorene provide an ideal platform to realize extremely thin body metal-oxide-semiconductor field effect transistors (MOSFETs) which is highly immune to short channel effects in the ultra-scaled regime. Even with the excellent electrostatic integ...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6408428/ https://www.ncbi.nlm.nih.gov/pubmed/30850758 http://dx.doi.org/10.1038/s41598-019-40675-7 |