Atomic electrostatic maps of 1D channels in 2D semiconductors using 4D scanning transmission electron microscopy

Defects in materials give rise to fluctuations in electrostatic fields that reflect the local charge density, but imaging this with single atom sensitivity is challenging. However, if possible, this provides information about the energetics of adatom binding, localized conduction channels, molecular...

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Detalles Bibliográficos
Autores principales: Fang, Shiang, Wen, Yi, Allen, Christopher S., Ophus, Colin, Han, Grace G. D., Kirkland, Angus I., Kaxiras, Efthimios, Warner, Jamie H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6408534/
https://www.ncbi.nlm.nih.gov/pubmed/30850616
http://dx.doi.org/10.1038/s41467-019-08904-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6408534/
https://www.ncbi.nlm.nih.gov/pubmed/30850616
http://dx.doi.org/10.1038/s41467-019-08904-9

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