Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modu...

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Detalles Bibliográficos
Autores principales: Xu, Yin, Li, Feng, Kang, Zhe, Huang, Dongmei, Zhang, Xianting, Tam, Hwa-Yaw, Wai, P. K. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6409800/
https://www.ncbi.nlm.nih.gov/pubmed/30691206
http://dx.doi.org/10.3390/nano9020157

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6409800/
https://www.ncbi.nlm.nih.gov/pubmed/30691206
http://dx.doi.org/10.3390/nano9020157

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