Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the devi...

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Detalles Bibliográficos
Autores principales: Lu, Hongliang, Lu, Bin, Zhang, Yuming, Zhang, Yimen, Lv, Zhijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410157/
https://www.ncbi.nlm.nih.gov/pubmed/30717154
http://dx.doi.org/10.3390/nano9020181

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410157/
https://www.ncbi.nlm.nih.gov/pubmed/30717154
http://dx.doi.org/10.3390/nano9020181

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