Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

[Image: see text] Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Ferm...

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Detalles Bibliográficos
Autores principales: Sotthewes, Kai, van Bremen, Rik, Dollekamp, Edwin, Boulogne, Tim, Nowakowski, Krystian, Kas, Daan, Zandvliet, Harold J. W., Bampoulis, Pantelis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410613/
https://www.ncbi.nlm.nih.gov/pubmed/30873255
http://dx.doi.org/10.1021/acs.jpcc.8b10971

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410613/
https://www.ncbi.nlm.nih.gov/pubmed/30873255
http://dx.doi.org/10.1021/acs.jpcc.8b10971

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