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Deep elastic strain engineering of bandgap through machine learning
Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic m...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
National Academy of Sciences
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410806/ https://www.ncbi.nlm.nih.gov/pubmed/30770444 http://dx.doi.org/10.1073/pnas.1818555116 |