Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the r...

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Detalles Bibliográficos
Autores principales: Feng, Yulin, Huang, Peng, Zhou, Zheng, Ding, Xiangxiang, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786/
https://www.ncbi.nlm.nih.gov/pubmed/30859337
http://dx.doi.org/10.1186/s11671-019-2885-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786/
https://www.ncbi.nlm.nih.gov/pubmed/30859337
http://dx.doi.org/10.1186/s11671-019-2885-2

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