Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the r...

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Detalles Bibliográficos
Autores principales: Feng, Yulin, Huang, Peng, Zhou, Zheng, Ding, Xiangxiang, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786/
https://www.ncbi.nlm.nih.gov/pubmed/30859337
http://dx.doi.org/10.1186/s11671-019-2885-2
Descripción
Sumario:In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO(2) interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.

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