Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the r...

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Autores principales: Feng, Yulin, Huang, Peng, Zhou, Zheng, Ding, Xiangxiang, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786/
https://www.ncbi.nlm.nih.gov/pubmed/30859337
http://dx.doi.org/10.1186/s11671-019-2885-2
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author Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_facet Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_sort Feng, Yulin
collection PubMed
description In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO(2) interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.
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spelling pubmed-64117862019-03-28 Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition Feng, Yulin Huang, Peng Zhou, Zheng Ding, Xiangxiang Liu, Lifeng Liu, Xiaoyan Kang, Jinfeng Nanoscale Res Lett Nano Express In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO(2) interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation. Springer US 2019-03-11 /pmc/articles/PMC6411786/ /pubmed/30859337 http://dx.doi.org/10.1186/s11671-019-2885-2 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title_full Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title_fullStr Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title_full_unstemmed Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title_short Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
title_sort negative differential resistance effect in ru-based rram device fabricated by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786/
https://www.ncbi.nlm.nih.gov/pubmed/30859337
http://dx.doi.org/10.1186/s11671-019-2885-2
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