Incorporation of Phosphorus Impurities in a Silicon Nanowire Transistor with a Diameter of 5 nm

Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positi...

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Detalles Bibliográficos
Autores principales: Jiang, Yanfeng, Wang, Wenjie, Wang, Zirui, Wang, Jian-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412190/
https://www.ncbi.nlm.nih.gov/pubmed/30769928
http://dx.doi.org/10.3390/mi10020127

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412190/
https://www.ncbi.nlm.nih.gov/pubmed/30769928
http://dx.doi.org/10.3390/mi10020127

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