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Incorporation of Phosphorus Impurities in a Silicon Nanowire Transistor with a Diameter of 5 nm
Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positi...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412190/ https://www.ncbi.nlm.nih.gov/pubmed/30769928 http://dx.doi.org/10.3390/mi10020127 |