Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si [Formula: see text] N [Formula: see text] bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono l...

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Autores principales: González-Fernández, Alfredo A., Juvert, Joan, Aceves-Mijares, Mariano, Domínguez, Carlos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412257/
https://www.ncbi.nlm.nih.gov/pubmed/30791460
http://dx.doi.org/10.3390/s19040865
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author González-Fernández, Alfredo A.
Juvert, Joan
Aceves-Mijares, Mariano
Domínguez, Carlos
author_facet González-Fernández, Alfredo A.
Juvert, Joan
Aceves-Mijares, Mariano
Domínguez, Carlos
author_sort González-Fernández, Alfredo A.
collection PubMed
description In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si [Formula: see text] N [Formula: see text] bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.
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spelling pubmed-64122572019-04-03 Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources González-Fernández, Alfredo A. Juvert, Joan Aceves-Mijares, Mariano Domínguez, Carlos Sensors (Basel) Article In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si [Formula: see text] N [Formula: see text] bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride. MDPI 2019-02-19 /pmc/articles/PMC6412257/ /pubmed/30791460 http://dx.doi.org/10.3390/s19040865 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
González-Fernández, Alfredo A.
Juvert, Joan
Aceves-Mijares, Mariano
Domínguez, Carlos
Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title_full Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title_fullStr Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title_full_unstemmed Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title_short Luminescence from Si-Implanted SiO(2)-Si(3)N(4) Nano Bi-Layers for Electrophotonic Integrated Si Light Sources
title_sort luminescence from si-implanted sio(2)-si(3)n(4) nano bi-layers for electrophotonic integrated si light sources
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412257/
https://www.ncbi.nlm.nih.gov/pubmed/30791460
http://dx.doi.org/10.3390/s19040865
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AT acevesmijaresmariano luminescencefromsiimplantedsio2si3n4nanobilayersforelectrophotonicintegratedsilightsources
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