A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination...

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Detalles Bibliográficos
Autores principales: Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412306/
https://www.ncbi.nlm.nih.gov/pubmed/30691138
http://dx.doi.org/10.3390/mi10020091

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412306/
https://www.ncbi.nlm.nih.gov/pubmed/30691138
http://dx.doi.org/10.3390/mi10020091

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