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A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412306/ https://www.ncbi.nlm.nih.gov/pubmed/30691138 http://dx.doi.org/10.3390/mi10020091 |