Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO)...

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Detalles Bibliográficos
Autor principal: Li, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412854/
https://www.ncbi.nlm.nih.gov/pubmed/30813443
http://dx.doi.org/10.3390/mi10020151

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412854/
https://www.ncbi.nlm.nih.gov/pubmed/30813443
http://dx.doi.org/10.3390/mi10020151

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