High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling

The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si source and drain region is proposed, and its elec...

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Detalles Bibliográficos
Autores principales: Kim, Garam, Lee, Jaehong, Kim, Jang Hyun, Kim, Sangwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412961/
https://www.ncbi.nlm.nih.gov/pubmed/30678322
http://dx.doi.org/10.3390/mi10020077

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6412961/
https://www.ncbi.nlm.nih.gov/pubmed/30678322
http://dx.doi.org/10.3390/mi10020077

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