Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD

Eu-doped GaN is a promising material for the active layer in red light emitting diodes. Although the output power of LEDs based on GaN:Eu has been increasing by a combination of structural and growth optimizations, there is still a significant limitation resulting from a poor light extraction effici...

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Detalles Bibliográficos
Autores principales: Lesage, A., Timmerman, D., Inaba, T., Gregorkiewicz, T., Fujiwara, Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414605/
https://www.ncbi.nlm.nih.gov/pubmed/30862946
http://dx.doi.org/10.1038/s41598-019-40971-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414605/
https://www.ncbi.nlm.nih.gov/pubmed/30862946
http://dx.doi.org/10.1038/s41598-019-40971-2

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